Laterally stacked varactor formed by ion implantation

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Laterally stacked varactor formed by ion implantation

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Laterally stacked varactor formed by ion implantation Planar, MMIC compatible, multi-junction varactors have been fabricated using a single n-type epitaxial layer followed by multiple energy Mg+ ion implantation. The junctions, numbering between 1 and 4 (= N), were formed laterally by selective implantation masking. Current-voltage measurements of the devices show the benefits of the stacking with breakdown voltage almost proportional to N.

Inspec keywords: MMIC; varactors; semiconductor epitaxial layers; ion implantation; microwave diodes; semiconductor device breakdown

Other keywords: current-voltage measurements; selective implantation masking; MMIC compatible varactors; laterally stacked varactor; planar multijunction varactors; GaAs:Mg; breakdown voltage; ion implantation; multiple energy Mg+ implants; single n-type epitaxial layer

Subjects: Microwave integrated circuits; Capacitors; Junction and barrier diodes; Semiconductor doping; Solid-state microwave circuits and devices

References

    1. 1)
      • R.J. Hwu , S.C. Kao . Design consideration of monolithic milimeterwave barrier varactor diodefrequency multiplier arrays. Int. J. Infrared Millimeter Waves , 1087 - 1105
    2. 2)
      • M.V. Rao . High-energy (MeV) ion implantation and its device applications in GaAsand InP. IEEE Trans. , 1053 - 1066
    3. 3)
      • E. Kollberg , A. Rydberg . Quantum-barrier-varactor diodes for high-efficiencey millimeter-wavemultipliers. Electron. Lett. , 1696 - 1698
    4. 4)
      • K. Lundien , R.J. Mattauch , J. Archer , R. Malik . Hyperabrupt junction varactor diodes for millimeter-wavelength harmonicgenerators. IEEE Trans. , 23 - 238
    5. 5)
      • Staecker, P.W., Hines, M.E., Occhiuti, F., Cushman, J.F.: `Multi-Watt power generation at millimeter-wave frequencies using epitaxially-stackedvaractor diodes', IEEE MTT-S Dig., 1987, p. 917–920.
    6. 6)
      • A. Uhlir . The potential of semiconductor diodes in high frequency communications. Proc. IRE , 1099 - 1115
    7. 7)
      • S. Hutchinson , R. Gwilliam , M.J. Kelly , B.J. Scaly , A. Chew , J. Stephens . Acceptor profile control in GaAs using co-implantation of Zn and P. Nucl. Instrum. Methods B. , 459 - 462
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