http://iet.metastore.ingenta.com
1887

Laterally stacked varactor formed by ion implantation

Laterally stacked varactor formed by ion implantation

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Laterally stacked varactor formed by ion implantation Planar, MMIC compatible, multi-junction varactors have been fabricated using a single n-type epitaxial layer followed by multiple energy Mg+ ion implantation. The junctions, numbering between 1 and 4 (= N), were formed laterally by selective implantation masking. Current-voltage measurements of the devices show the benefits of the stacking with breakdown voltage almost proportional to N.

References

    1. 1)
      • R.J. Hwu , S.C. Kao . Design consideration of monolithic milimeterwave barrier varactor diodefrequency multiplier arrays. Int. J. Infrared Millimeter Waves , 1087 - 1105
    2. 2)
      • K. Lundien , R.J. Mattauch , J. Archer , R. Malik . Hyperabrupt junction varactor diodes for millimeter-wavelength harmonicgenerators. IEEE Trans. , 23 - 238
    3. 3)
      • E. Kollberg , A. Rydberg . Quantum-barrier-varactor diodes for high-efficiencey millimeter-wavemultipliers. Electron. Lett. , 1696 - 1698
    4. 4)
      • A. Uhlir . The potential of semiconductor diodes in high frequency communications. Proc. IRE , 1099 - 1115
    5. 5)
      • Staecker, P.W., Hines, M.E., Occhiuti, F., Cushman, J.F.: `Multi-Watt power generation at millimeter-wave frequencies using epitaxially-stackedvaractor diodes', IEEE MTT-S Dig., 1987, p. 917–920.
    6. 6)
      • M.V. Rao . High-energy (MeV) ion implantation and its device applications in GaAsand InP. IEEE Trans. , 1053 - 1066
    7. 7)
      • S. Hutchinson , R. Gwilliam , M.J. Kelly , B.J. Scaly , A. Chew , J. Stephens . Acceptor profile control in GaAs using co-implantation of Zn and P. Nucl. Instrum. Methods B. , 459 - 462
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990579
Loading

Related content

content/journals/10.1049/el_19990579
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address