Low-voltage, high-speed AlSb/InAsSb HEMTs
Antimonide-based HEMTs have heen fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 µm gate length exhibit decreased output conductance and improved voltage gain. At VDS = 0.6 V, a microwave transconductance of 700 mS/mm and an output conductance of 110 mS/mm were obtained corresponding to a voltage gain of 6.