Implantation approach to SEU suppression in GaAs

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Implantation approach to SEU suppression in GaAs

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It is shown that oxygen-implanted GaAs with oxygen concentrations of 1020 cm–3 (or 1019 cm–3 if co-implanted with Al), annealed in the 500 – 850°C temperature range, can result in highly resistive layers with subpicosecond free-carrier lifetimes. It is suggested that such layers can be used to suppress single event upsets (SEUs) in GaAs digital circuits.

Inspec keywords: ion implantation; digital integrated circuits; annealing; carrier lifetime; gallium arsenide; radiation hardening (electronics); III-V semiconductors; oxygen

Other keywords: highly resistive layers; SEU suppression; oxygen-implanted GaAs; annealing; GaAs digital circuits; single event upsets; subpicosecond free-carrier lifetimes; 500 to 850 C; GaAs:O

Subjects: Radiation effects (semiconductor technology); Semiconductor doping; Annealing processes in semiconductor technology; Semiconductor integrated circuits; Digital electronics

References

    1. 1)
      • J.M. Ryan , J.W. Huang , T.F. Kuech , K.L. Bray . The effects of temperature and oxygen concentration on the photoluminescenceof epitaxial metalorganic vapor-phase epitaxy GaAs:O. J. Appl. Phys. , 1175 - 1179
    2. 2)
      • J.W. Huang , D.F. Gaines , T.F. Kuech , R.M. Potemski , F. Cardone . Alkoxide precursors for controlled oxygen incorporation during metalorganicvapor phase epitaxy GaAs and AlxGa1–xAs. J. Electron. Mater. , 659 - 667
    3. 3)
      • T.R. Weatherford , P.W. Marshall , C.J. Marshall , D.J. Fouts , B. Mathes , M. LaMacchia . Effects of low-temperature buffer-layer thickness and growth temperatureon the SEE sensitivity of GaAs HIGFET circuits. IEEE Trans. Nucl. Sci. , 6
    4. 4)
      • J.U. Kang , M.Y. Frankel , J.W. Huang , T.F. Kuech . Ultrafast carrier trapping in oxygen-doped metal-organic vapor phaseepitaxy GaAs. Appl. Phys. Lett. , 1560 - 1562
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