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Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

Improved base current ideality in polysilicon emitter bipolar transistors due to fast fluorine diffusion through oxide

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The fast diffusion of fluorine in polysilicon and silicon dioxide is shown to improve the base current ideality of polysilicon emitter bipolar transistors. This behaviour is explained by the passivation of interface states at the oxide/silicon interface around the perimeter of the emitter.

References

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