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Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

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Thin films of GaSb were transferred to insulating substrates by a combination of wafer bonding and separation by hydrogen ion implantation. Hydrogen ion implantation and exfoliation were successfully exploited to transfer a 240 nm thick GaSb film to a glass substrate at temperatures ≤150°C. A novel room temperature wafer bonding technique utilising an ultraviolet/ozone process was also demonstrated. The films have been characterised by atomic force and scanning electron microscopies.

Inspec keywords: atomic force microscopy; gallium compounds; ion implantation; III-V semiconductors; semiconductor thin films; scanning electron microscopy; wafer bonding

Other keywords: atomic force microscopy; GaSb; 150 C; wafer bonding; exfoliation; ultraviolet/ozone process; insulating glass substrate; GaSb thin film transfer; separation by hydrogen implantation; scanning electron microscopy

Subjects: II-VI and III-V semiconductors; Semiconductor doping

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