Microwave ferroelectric capacitors have been fabricated using separation by hydrogen ion implantation and transfer of a 500 nm thick single-crystal SrTiO3 layer to an insulating glass substrate. The capacitor films are of high quality with a measured quality factor of nearly 100 at 10 GHz.
Inspec keywords: ion implantation; microwave devices; strontium compounds; hydrogen; ferroelectric thin films; ferroelectric capacitors; thin film capacitors; Q-factor
Other keywords:
Subjects: Ferroelectric devices; Capacitors; Solid-state microwave circuits and devices
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