Microwave ferroelectric capacitors have been fabricated using separation by hydrogen ion implantation and transfer of a 500 nm thick single-crystal SrTiO3 layer to an insulating glass substrate. The capacitor films are of high quality with a measured quality factor of nearly 100 at 10 GHz.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990354
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