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Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation

Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation

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Microwave ferroelectric capacitors have been fabricated using separation by hydrogen ion implantation and transfer of a 500 nm thick single-crystal SrTiO3 layer to an insulating glass substrate. The capacitor films are of high quality with a measured quality factor of nearly 100 at 10 GHz.

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