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Sulphur passivation of dry-etched AlGaAs laser facets

Sulphur passivation of dry-etched AlGaAs laser facets

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The effects are reported of sulphur treatment in Na2S and (NH4)2S solutions for the passivation of AlGaAs laser facets, etched using Cl2-based chemically-assisted-ion-beam-etching. Compared to untreated lasers, a 37% average improvement in the catastrophic optical mirror damage threshold is measured on sulphur-treated broad-area CAIBE lasers.

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