Sulphur passivation of dry-etched AlGaAs laser facets
Sulphur passivation of dry-etched AlGaAs laser facets
- Author(s): P. Collot ; S. Delalande ; J. Olivier
- DOI: 10.1049/el:19990326
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- Author(s): P. Collot 1 ; S. Delalande 1 ; J. Olivier 1
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View affiliations
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Affiliations:
1: Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
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Affiliations:
1: Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
- Source:
Volume 35, Issue 6,
18 March 1999,
p.
506 – 508
DOI: 10.1049/el:19990326 , Print ISSN 0013-5194, Online ISSN 1350-911X
The effects are reported of sulphur treatment in Na2S and (NH4)2S solutions for the passivation of AlGaAs laser facets, etched using Cl2-based chemically-assisted-ion-beam-etching. Compared to untreated lasers, a 37% average improvement in the catastrophic optical mirror damage threshold is measured on sulphur-treated broad-area CAIBE lasers.
Inspec keywords: passivation; sulphur; sputter etching; gallium arsenide; aluminium compounds; laser cavity resonators; semiconductor lasers; optical fabrication; III-V semiconductors
Other keywords:
Subjects: Design of specific laser systems; Laser resonators and cavities; Semiconductor lasers; Lasing action in semiconductors; Laser resonators and cavities; Optical fabrication, surface grinding; Surface treatment (semiconductor technology); Surface treatment and degradation in semiconductor technology
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