A study is presented into the reverse-short-channel effect (RSCE) for Sb S/D ion implantation at 10 keV. A high impurity concentration is found to reduce interstitial movement in the channel, which restricts the level RSCE at short-channel lengths. The interstitials can be healed by thermal treatment at 850°C directly after ion implantation, resulting in the suppression of the RSCE.
Inspec keywords: annealing; antimony; doping profiles; MOSFET; interstitials; impurity distribution; ion implantation
Other keywords:
Subjects: Semiconductor doping; Insulated gate field effect transistors; Annealing processes in semiconductor technology
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