Suppression of reverse-short-channel effect in sub –0.1 µm n-MOSFETs with Sb S/D implantation
Suppression of reverse-short-channel effect in sub –0.1 µm n-MOSFETs with Sb S/D implantation
- Author(s): M. Tsuno ; M. Tanaka ; M. Koh ; K. Iwamoto ; H. Murakami ; K. Shibahara ; M.M. Mattausch
- DOI: 10.1049/el:19990325
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- Author(s): M. Tsuno 1 ; M. Tanaka 2 ; M. Koh 3 ; K. Iwamoto 2 ; H. Murakami 2 ; K. Shibahara 1 ; M.M. Mattausch 2
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View affiliations
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Affiliations:
1: Research Center for Nanodevices and Systems, Hiroshima University, Hiroshima, Japan
2: Department of Engineering, Hiroshima University, Hiroshima, Japan
3: CREST, Japan Science and Technology Corporation (JST), Japan
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Affiliations:
1: Research Center for Nanodevices and Systems, Hiroshima University, Hiroshima, Japan
- Source:
Volume 35, Issue 6,
18 March 1999,
p.
508 – 509
DOI: 10.1049/el:19990325 , Print ISSN 0013-5194, Online ISSN 1350-911X
A study is presented into the reverse-short-channel effect (RSCE) for Sb S/D ion implantation at 10 keV. A high impurity concentration is found to reduce interstitial movement in the channel, which restricts the level RSCE at short-channel lengths. The interstitials can be healed by thermal treatment at 850°C directly after ion implantation, resulting in the suppression of the RSCE.
Inspec keywords: annealing; antimony; doping profiles; MOSFET; interstitials; impurity distribution; ion implantation
Other keywords:
Subjects: Semiconductor doping; Insulated gate field effect transistors; Annealing processes in semiconductor technology
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