Fabrication technology of polysilicon resistors using novel mixed process for analogue CMOS applications

Fabrication technology of polysilicon resistors using novel mixed process for analogue CMOS applications

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A new mixed doping technology, in which arsenic ions were implanted into a phosphorus-doped polysilicon film, has been developed to obtain extremely low temperature coefficient of resistance (TCR) polysilicon resistors. For the same sheet resistance (Rs) value of 75 Ω/□, the TCR of the polysilicon resistor fabricated by the proposed process was ~4.3 times lower (112 ppm/°C) than that of the conventional phosphorus-doped polysilicon resistor (479 ppm/°C).


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