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SiGe p-channel MOSFETs with tungsten gate

SiGe p-channel MOSFETs with tungsten gate

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A self-aligned SiGe p-channel MOSFET tungsten gate process with 0.1 µm resolution is demonstrated. Interface charge densities of MOS capacitors realised with the low pressure sputtered tungsten process are comparable with thermally evaporated aluminium gate technologies (5 × 1010 cm–2 and 2 × 1011 cm–2 for W and Al, respectively). Initial results from 1 µm gate length SiGe p-channel MOSFETs using the tungsten-based process show devices with a transconductance of 33 mS/mm and effective channel mobility of 190 cm2/Vs.

Inspec keywords: semiconductor materials; tungsten; silicon compounds; MOS capacitors; sputter deposition; Ge-Si alloys; carrier mobility; MOSFET

Other keywords: low pressure sputtered process; p-channel MOSFETs; 1 micron; effective channel mobility; MOS capacitors; SiGe-SiO2-W; transconductance; interface charge densities; semiconductor materials

Subjects: Metal-insulator-semiconductor structures; Sputter deposition; Insulated gate field effect transistors

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