Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

A novel S/D junction technology for realising sub-0.1 µm NMOSFETs is proposed. In this technology, S/D extensions are formed using arsenic (As) diffusion from an As adsorbed atomic layer on the silicon surface by high temperature RTA. This method provides an extremely shallow extension (below 20 nm) with low sheet-resistance (below 2 kΩ/□), maintaining a low junction leakage. NMOSFETs fabricated using this technology show better suppression of the short channel effect compared to conventional FETs.

Inspec keywords: thermal diffusion; semiconductor doping; doping profiles; MOSFET; rapid thermal annealing; arsenic

Other keywords: S/D junction technology; Si:As; atomic layer doping; 0.1 micron; ultra-shallow junction technology; high temperature RTA; source/drain junction technology; short channel effect suppression; NMOSFETs; As diffusion; arsenic adsorbed layer; n-channel MOSFET; low junction leakage

Subjects: Semiconductor doping; Annealing processes in semiconductor technology; Insulated gate field effect transistors

References

    1. 1)
      • L. Kipp , R.D. Bringans , D.K. Biegelsen , L.M. Swartz . Arsine adsorption on Si(100) 2×1: a photo-emission and scanning-tunneling-microscopystudy. Am. Phys. Rev. B , 5448 - 5455
    2. 2)
      • Momose, H.S., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., Iwai, H.: `Tunneling gate oxide approach to ultra-high current drive in small-geometryMOSFETs', IEDM, 1994, p. 593–596.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990299
Loading

Related content

content/journals/10.1049/el_19990299
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address