Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

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Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer

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A novel S/D junction technology for realising sub-0.1 µm NMOSFETs is proposed. In this technology, S/D extensions are formed using arsenic (As) diffusion from an As adsorbed atomic layer on the silicon surface by high temperature RTA. This method provides an extremely shallow extension (below 20 nm) with low sheet-resistance (below 2 kΩ/□), maintaining a low junction leakage. NMOSFETs fabricated using this technology show better suppression of the short channel effect compared to conventional FETs.

Inspec keywords: thermal diffusion; semiconductor doping; doping profiles; MOSFET; rapid thermal annealing; arsenic

Other keywords: S/D junction technology; Si:As; atomic layer doping; 0.1 micron; ultra-shallow junction technology; high temperature RTA; source/drain junction technology; short channel effect suppression; NMOSFETs; As diffusion; arsenic adsorbed layer; n-channel MOSFET; low junction leakage

Subjects: Semiconductor doping; Annealing processes in semiconductor technology; Insulated gate field effect transistors

References

    1. 1)
      • L. Kipp , R.D. Bringans , D.K. Biegelsen , L.M. Swartz . Arsine adsorption on Si(100) 2×1: a photo-emission and scanning-tunneling-microscopystudy. Am. Phys. Rev. B , 5448 - 5455
    2. 2)
      • Momose, H.S., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., Iwai, H.: `Tunneling gate oxide approach to ultra-high current drive in small-geometryMOSFETs', IEDM, 1994, p. 593–596.
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