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Small-signal distributed FET model consistent with device scaling

Small-signal distributed FET model consistent with device scaling

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A distributed modelling approach for micro- and millimetre-wave FETs is presented. Model identification is directly carried out on the bases of S-parameter measurements and electromagnetic analysis of the device layout, without requiring cumbersome optimisation techniques. Experimental results confirm that the model is consistent with device scaling.

Inspec keywords: field effect MMIC; millimetre wave field effect transistors; microwave field effect transistors; identification; S-parameters; Schottky gate field effect transistors; semiconductor device models

Other keywords: model identification; MMIC design; device scaling; device layout; MESFET; millimetre-wave FETs; small-signal FET model; distributed modelling approach; S-parameter measurements; electromagnetic analysis; microwave FETs

Subjects: Other field effect integrated circuits; Other field effect devices; Solid-state microwave circuits and devices; Semiconductor device modelling, equivalent circuits, design and testing; Microwave integrated circuits

References

    1. 1)
      • Avitabile, G., Cidronali, A., Vannini, G., Manes, G.: `Multi-finger effects in GaAs FET distributed large signal CAD model', 1996 IEEE Int. Electron Devices Meeting, 8-11 December 1996, San Francisco.
    2. 2)
      • Cidronali, A., Collodi, G., Vannini, G., Santarelli, A., Manes, G.: `Small signal distributed FET modeling through electromagnetic analysisof the extrinsic structure', IEEE MTT-S, June 1998, Baltimore, MA.
    3. 3)
      • Jansen, R.H., Pogatzki, P.: `Nonlinear distributed modelling of multifinger FETs/HEMTs in terms oflayout-geometry and process-data', Proc. 21st European Microwave Conf., 1991, Stuttgart, Germany, p. 609–614.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990267
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