Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with δ-doped continuous-conduction-band (CCB) structure

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor with a δ-doped continuous-conduction-band (CCB) structure has been fabricated successfully and studied. The use of the δ-doped CCB structure can effectively eliminate the potential spike in the E-B heterojunction. An offset voltage as low as 50 mV and a relatively high current gain of 80 have been obtained experimentally. The studied device is therefore promising for practical circuit applications.

Inspec keywords: III-V semiconductors; aluminium compounds; conduction bands; doping profiles; heterojunction bipolar transistors; indium compounds; gallium arsenide

Other keywords: In0.53Al0.22Ga0.25As-InP; III-V semiconductors; δ-doped continuous-conduction-band; E-B heterojunction; current gain; heterojunction bipolar transistor; 50 mV; potential spike; offset voltage

Subjects: Semiconductor doping; Bipolar transistors

References

    1. 1)
      • R.M. Asbeck , M.F. Chang , K.C. Wang , D.L. Miller , G.J. Sullivan , N.H. Sheng , E. Sovero , J.A. Higgins . Heterojunction bipolartransistor for microwave and millimeter-wave integrated circuits. IEEE Trans. Electron. Devices , 2571 - 2579
    2. 2)
      • J. Bohrer , A. Krost , D.B. Bimberg . Composition dependence ofband gap and type of lineup in In1–x–yGaxAlyAs/InP heterostructures. Appl. Phys. Lett. , 1918 - 1920
    3. 3)
      • H. Kroemer . Heterostructure bipolar transistors and integrated circuits. Proc. IEEE , 13 - 25
    4. 4)
      • W.C. Liu , W.S. Lour . An improved heterostructure-emitter bipolartransistor (HEBT). IEEE Electron Device Lett. , 474 - 476
    5. 5)
      • L.F. Luo , H.L. Evans , E.S. Yang . A heterojunction bipolar transistorwith separate carrier injection and confinement. IEEE Trans. , 1844 - 1846
    6. 6)
      • Ng, C.C., Yang, E.S.: `A thermionic-diffusion model of the polysiliconemitter', IEDM Tech. Dig., 1986, p. 32–35.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990220
Loading

Related content

content/journals/10.1049/el_19990220
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address