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New annealing processes and explanation for novel silicon pn junctions formed by proton implantation

New annealing processes and explanation for novel silicon pn junctions formed by proton implantation

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Proton-implanted n-type Si wafers were annealed at 950°C to achieve novel pn junctions. The novel pn junctions are explained by the combined use of four models. The background (e.g. oxygen impurity) of an Si wafer is suggested to play a key role in creating the novel pn junction.

Inspec keywords: annealing; ion implantation; silicon; semiconductor process modelling; elemental semiconductors; p-n junctions

Other keywords: models; proton-implanted Si wafers; Si p-n junction formation; 950 C; Si:H; annealing processes; n-type Si wafers; oxygen impurity; proton implantation

Subjects: Semiconductor process modelling and simulation; Annealing processes in semiconductor technology; Semiconductor doping; Semiconductor junctions

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