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Quantum dot resonant cavity light emitting diode operating near 1300 nm

Quantum dot resonant cavity light emitting diode operating near 1300 nm

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Published

The first demonstration of resonant cavity enhancement of optical emission from an InAs/GaAs quantum dot light emitting diode is reported. For emission around 1300 nm, efficiency enhancements of greater than 10 for low current injection and greater than 3 for higher current injection for light coupled into a multimode optical fibre are observed.

Inspec keywords: semiconductor quantum dots; indium compounds; cavity resonators; III-V semiconductors; light emitting diodes; gallium arsenide

Other keywords: 1300 nm; optical emission; InAs-GaAs quantum dot; InAs-GaAs; quantum dot resonant cavity LED; resonant cavity light emitting diode

Subjects: Semiconductor superlattices, quantum wells and related structures; Light emitting diodes

References

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      • N.E.J. Hunt , E.F. Schubert , R.A. Logan , G.J. Zydzic . Enhanced spectral power density and reduced linewidth at 1.3 µm in an InGaAsP quantum well resonant cavity light emitting diode. Appl. Phys. Lett. , 2287 - 2289
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      • J. Blondelle , H. De Neve , P. Demeester , P. Van Daele , G. Borghs , . Baets . 16% external quantum efficiency from planar microcavity LEDs at 940 nmby precise matching of cavity wavelength. Electron. Lett. , 1286 - 1288
    3. 3)
      • E.F. Schubert , N.E.J. Hunt , R.J. Malik , M. Micovic , D.L. Miller . Temperature and modulation characteristics of resonant-cavity light emitting diodes. J. Lightwave Technol. , 1721 - 1729
    4. 4)
      • R. Murray , D. Childs , S. Malik , P. Siverns , C. Roberts , J.-M. Hartmann , P. Stavrinou . 1.3 µm room temperature emission from InAs/GaAs self-assembledquantum dots. to be published in Jpn. J. Appl. Phys.
    5. 5)
      • D.L. Huffaker , D.G. Deppe . Electroluminescence efficiency of 1.3 µm wavelength InGaAs/GaAs quantum dots. Appl. Phys. Lett. , 4 , 520 - 522
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