High power CW output from low confinement asymmetric structure diode laser

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High power CW output from low confinement asymmetric structure diode laser

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Published

High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1–3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/µm). The threshold current density is 270–400 A/cm2.

Inspec keywords: MOCVD; semiconductor growth; quantum well lasers; current density; vapour phase epitaxial growth

Other keywords: 1 to 3 mm; asymmetric structure diode laser; metal organic vapour phase epitaxy; confinement; injection current; threshold current density; uncoated facet; gain guided lasers; high power CW output; optical trap layer; 1.8 W; 4.7 A; 50 micron; continuous wave optical power

Subjects: Thin film growth, structure, and epitaxy; Lasing action in semiconductors; Semiconductor lasers; Design of specific laser systems; Chemical vapour deposition; Chemical vapour deposition

References

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      • M. Buda , T.G. van de Roer , L.M.F. Kaufmann , Gh. Iordache , D. Cengher , D. Diaconescu , I.B. Petrescu-Prahova , J.E.M. Haverkort , W. van der Vleuten , J.H. Wolter . Analysis of 6 nm AlGaAs SQW low confinement laser structures forvery high power operation. IEEE Sel. Topics Quantum Electron. , 2 , 173 - 179
    2. 2)
      • Petrescu-Prahova, I.B., Lazanu, S.: `High power laser diode', PCT/RO91/00002, WO91/16747, , International patent.
    3. 3)
      • Petrescu-Prahova, I.B., Buda, M., Vlaicu, M.: `High power laser diode', PCT/RO95/00011, WO96/08062, , International patent.
    4. 4)
      • Heerlein, J., Schiechlen, E., Jager, R., Unger, P.: `63% wall plug efficiencyInGaAs/AlGaAs broad-area laser diodes and arrays', CLEO/Europe '98,Proceedings, p. 267.
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