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High-fTn-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

High-fTn-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD

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The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2 µm and drain-source separation Lds = 0.9 µm displayed unity current gain cutoff frequencies as high as fT = 45 GHz (47 GHz) at Vds = +0.6 V (+1.5 V). Similar devices with Lg = 0.2 µm and Lds = 0.5 µm produced values of fT = 61 GHz (62 GHz) at Vds = +0.6 V (+1.0 V). The value fT = 62 GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET.

References

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      • K. Ismail . Si/SiGe high-speed field-effect transistors. IEDM Tech. Dig. , 509 - 512
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      • M. Glück , T. Hackbarth , U. König , A. Haas , G. Höck , E. Kohn . High fmax n-type Si/SiGe MODFETs. Electron. Lett. , 335 - 337
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      • U. König , M. Glück , G. Höck . Si/SiGe field-effect transistors. J. Vac. Sci. Technol. B , 2609 - 2614
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      • P. Dollfus . Si/Si1–xGex heterostructures: Electron transportand field-effecttransistor operation using Monte Carlo simulation. J. Appl. Phys. , 3911 - 3916
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