High power 980 nm InGaAs/AlGaAs lasers consisting of an array of closely-spaced tapered waveguides, giving low beam divergence and hence high brightness, have been fabricated. The lateral beam divergence is in the range 6–8° (full-width at 1/e2) for all output powers. The vertical beam divergence, which is defined by the layer structure, is 44° (full-width at 1/e2). CW output powers of 9.5 W and a catastrophic optical mirror damage limit in excess of 170 mW/µm-facet have been demonstrated.
References
-
-
1)
-
H. Yang ,
L.J. Mawst ,
M. Nesnidal ,
J. Lopez ,
A. Bhattacharya ,
D. Botez
.
10 W near-diffraction limited peak pulsed power from Al-free, 0.98 µm-emitting phase-locked antiguiding arrays.
Electron. Lett.
,
2 ,
136 -
137
-
2)
-
P.J. Williams ,
J.J. Lewandowski ,
D.J. Robbins ,
A.K. Wood ,
F.O. Robson ,
B.K. Nayar
.
Tapered laser arrays for high power operation (>1.4 W CW) at 1.59 µm for applications in surgery.
Electron. Lett.
,
10 ,
993 -
994
-
3)
-
D. Mehuys ,
S. O'Brien ,
R.J. Lang ,
A. Hardy ,
D.F. Welch
.
5 W diffraction-limited, tapered-stripe unstable resonator semiconductor laser.
Electron. Lett.
,
22 ,
1855 -
1856
-
4)
-
Nayar, B.K., Lewandowski, J.J., Robbins, D.J., Vaudry, A., Williams, P.J.: `Novel high-power narrow-beam divergence tapered laser arrays at 980 nm', OSA Tech. Digest 1998, 6, p. 39–40CLEO ’98, .
-
5)
-
D.P. Bour ,
A. Rosen
.
Optimum cavity length for high conversion efficiency quantum well diode lasers.
J. Appl. Phys.
,
7 ,
2813 -
2818
-
6)
-
L.J. Mawst ,
A. Bhattacharya ,
J. Lopez ,
D. Botez ,
D.Z. Garbuzov ,
L. DeMarco ,
J.C. Connolly ,
M. Jansen ,
F. Fang ,
R.F. Nabiev
.
8 W continuous wave front-facet power from broad-waveguide Al-free 980nm diode lasers.
Appl. Phys. Lett.
,
11 ,
1532 -
1534
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