46 GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver

46 GHz bandwidth monolithic InP/InGaAs pin/SHBT photoreceiver

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An InGaAs pin-photodetector and a lumped SHBT transimpedance preamplifier have been monolithically integrated and characterised. The preamlifier achieves a transimpedance gain of 44.6 dBΩ (170 Ω) and the optical/electrical –3 dB bandwidth of the entire receiver is 46 GHz, which is the highest bandwidth for any HBT based photoreceiver reported to date.


    1. 1)
      • Huber, D.: `23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with12 THzΩ gain-bandwidth product', Proc. 10th Conf. Indium Phosphide and Related Materials, May 1998, p. 447–450.
    2. 2)
      • Bauknecht, R.: `InP double heterojunction bipolar transistors for driver circuits infiber opticalcommunication systems', Dec. 1997, Dissertation, ETH, Nr. 12455.
    3. 3)
      • T. Vanisri . Integrated high frequency low noise current-mode optical transimpedancepreamplifiers. IEEE J. Solid State Circuits , 6 , 677 - 685
    4. 4)
      • E. Sano . Ultra-high speed, low power monolithic photoreceiver using InP/inGaAsdouble-heterojunctionbipolar transistors. Electron. Lett. , 12 , 1047 - 1048
    5. 5)
      • Muramoto, Y.: `46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguidePIN photodiode and a distributed amplifier', Proc. 23rd European Conf. Optical Communication, Sept. 1997, p. 37–40.
    6. 6)
      • V. Hurm . 40 Gb/s 1.55 µm pin-HEMT photoreceiver monolithically integratedon 3inGaAs substrate. Electron. Lett. , 21 , 2060 - 2062

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