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Investigation of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates

Investigation of data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates

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The data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.

References

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      • Mizutani, A., Hatori, N., Nishiyama, N., Koyama, F., Iga, K.: `Stable polarizationoperation of low threshold GaAs (311)B vertical-cavity surface emitting lasers under highspeed modulation', PD2-2, Proc. 3rd Optoelectron. and Communications Conf. (OECC'98), 1998, p. 22–23.
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      • M. Takahashi , P. Vaccaro , N. Egami , A. Misutani , A. Matsutani , F. Koyama , K. Iga . Oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)Asubstrates with dynamically stable polarisation. Electron. Lett. , 3 , 276 - 278
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990034
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