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Near room-temperature continuous-wave operation of electrically pumped 1.55 µm vertical cavity lasers with InGaAsP/InP bottom mirror

Near room-temperature continuous-wave operation of electrically pumped 1.55 µm vertical cavity lasers with InGaAsP/InP bottom mirror

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The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 µm diameter device, the threshold current is 6 mA and the input threshold power is 21 mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively.

References

    1. 1)
      • Piprek, J.: `High-temperature lasing of long-wavelength VCSELs: problems andprospects', Proc. SPIE, 1997, 3003, p. 182–193.
    2. 2)
      • S. Uchiyama , Y. Yokouchi , T. Ninomiya . Continuous-wave operation up to 36°Cof 1.3-µm GaInAsP-InP vertical cavity lasers. IEEE Photonics Technol. Lett. , 2 , 141 - 142
    3. 3)
      • N.M. Margalit , J. Piprek , S. Zhang , D.I. Babic , K. Streubel , R.P. Mirin , J.R. Wesselman , J.E. Bowers , E.L. Hu . 64°C continuous wave operation of 1.5 µmvertical-cavity laser. IEEE J. Sel. Topics Quantum Electron. , 2 , 359 - 365
    4. 4)
      • V. Jayaraman , J.C. Geske , M.H. MacDougal , F.H. Peters , T.D. Lowes , T.T. Char . Uniform threshold current, continuous-wave, singlemode 1300 nm verticalcavitylasers from 0 to 70°C. Electron. Lett. , 14 , 1405 - 1406
    5. 5)
      • Y. Ohiso , C. Amano , Y. Itoh , K. Tateno , Tadokoro , H. Takenouchi , T. Kurokawa . 1.55 µm vertical-cavity surface-emitting lasers with wafer fusedInGaAsP/InP-GaAs/AlAsDBRs. Electron. Lett. , 16 , 1483 - 1485
    6. 6)
      • Y. Qian , Z.H. Zhu , Y.H. Lo , D.L. Hoffaker , D.G. Deppe , H.Q. Ho , B.E. Hammons , W. Lin , Y.K. Tou . Submilliamp 1.3 µm vertical-cavity lasers with thresholdcurrent density of < 500 A/cm2. Electron. Lett. , 12 , 1052 - 1054
    7. 7)
      • P. Salet , F. Gabriot , Ph. Pagnod-Rossaiux , A. Plais , E. Deroum , J. Pasquier , J. Jacquet . Room-temperature pulsed operation of 1.3 µm vertical-cavity lasersincludingbottom InGaAsP/InP multilayer Bragg mirrors. Electron. Lett. , 24 , 1408 - 1409
    8. 8)
      • Y. Imayo , A. Kasukawa , S. Kashwa , H. Okatomo . GaInAsP/InP semiconductormultilayer reflector grown by metalorganic vapor phase deposition and itsapplication to surface emitting laser diode. Jpn. J. Appl. Phys. , L1130 - L1132
    9. 9)
      • M.A. Fisher , Y.-Z. Huag , A.J. Dann , D.J. Elton , M.J. Harlow , S.D. Perrin , J. Reed , I. Reid , M.J. Adams . Pulsed electrrical operation of 1.5 µm vertical-cavity surfaceemitting lasers. IEEE Photonics Technol. Lett. , 608 - 610
    10. 10)
      • Rapp, S., Streubel, K., Salomonsson, F., Bentell, J., Hammar, M.: `All epitaxial,single-fused 1.55 µm vertical cavity laser', Proc. 10th Int.Conf. Indium Phosphide and Related Materials (IPRM) '98, 11-15 May 1997, Tsukuba, Japan, p. 303, to be published in Jpn. J. Appl. Phys., 38, (1B),1999.
    11. 11)
      • J. Boucart , C. Starck , A. Plais , E. Deroum , C. Fortin , F. Gabroit , A. Pinquier , L. Goldstein , D. Carpentier , J. Jacquet . RT pulsed operation of metamorphic VCSELat 1.55 µm. Electron. Lett. , 22 , 2133 - 2135
    12. 12)
      • H. Gebratsadik , P.K. Bhattacharya , K.K. Kamath , O.R. Qasimeh , D.J. Klotzkin , C. Caneau , R. Bhat . InP-based 1.5 µm vertical cavity surface emitting laser withepitaxially grown defect free GaAs-based distributed Bragg reflectors. Electron. Lett. , 13 , 1316 - 1317
    13. 13)
      • Piprek, J., Wenzel, H., Wunsche, H.-J., Braun, D., Henneberger, F.: `Modeling lightvs. current characteristics of long-wavelength VCSELs with various DBR materials', Proc. SPIE, 1995, 2399, p. 605–616.
    14. 14)
      • Enders, P., Piprek, J., Woerner, M.: `Intervalence band absorption in the AlGaAsmirror layers of long-wavelength vertical-cavity lasers', Conf. Lasers andElectro-Optics, CLEO, 1997, Baltimore.
    15. 15)
      • F. Salomonsson , K. Streubel , J. Bentell , M. Hammar , D. Keiper , R. Westphalen , J. Piprek , L. Sagalowicz , A. Rudra , J. Behrend . Wafer fused p-InP/p-GaAsheterojunctions. J. Appl. Phys. , 2 , 768 - 774
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