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Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications

Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications

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Low current, highly reliable operation at 80°C has been achieved for 650 nm band AlGaInP laser diodes (LDs) with a strained multiquantum well active layer on a (115)A substrate for the first time. The operation current was as low as 60 mA and the lifetime was 92 kh at 80°C, 5 mW. It was also shown that the operation current density is a dominant factor in determining the lifetime.

References

    1. 1)
      • M. Ohya , H. Fujii , K. Doi , J. Okuda , K. Anjim , K. Endo . Highly reliable operation at 80°C for 650 nm 5 mW AlGaInP LDs. Electron. Lett. , 1636 - 1638
    2. 2)
      • Y. Ueno , H. Fujii , H. Sawano , K. Kobayashi , K. Hara , A. Gomyo , K. Endo . 30 mW 690 nm high-power strained-quantum-well AlGaInP laser. IEEE J. Quantum Electron. , 1851 - 1856
    3. 3)
      • H. Fujii , J. Okuda , K. Endo , H. Yoshii , T. Kishi , H. Makita , H. Yamada . Low-threshold-current 670 nm multiquantum-well laser diodes. Electron. Lett. , 2140 - 2142
    4. 4)
      • R. Kobayashi , H. Hotta , F. Miyasaka , K. Hara , K. Kobayashi . Real index-guided AlGaInP visible laser with high-bandgap energy AlInPcurrent blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy. IEEE J. Quantum Electron. , 723 - 727
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990011
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