Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Lumped DC–50 GHz amplifier using InP/InGaAs HBTs

Lumped DC–50 GHz amplifier using InP/InGaAs HBTs

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A direct-coupled, lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved –3 dB bandwidth is 50 GHz with a DC gain of 9.8 dB and a gain peak of only 1.2 dB. This is the largest bandwidth reported for InP/InGaAs HBT amplifiers with such a flat gain curve.

References

    1. 1)
      • K.W. Kobayashi , J. Cowles , L.T. Tran , A. Gutierrez-Aitken , T.R. Block , K. Oki , D.C. Streit . A 50 MHz-55 GHz multidecade InP-based HBT distributed amplifier. IEEEMicrow. Guid. Wave Lett. , 353 - 355
    2. 2)
      • Huber, D., Bitter, M., Romier, S., Schnyder, I., Bauknecht, R., Morf, T., Bergamaschi, C., Jackel, H.: `23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12THzΩgain-bandwidth product', Proc. 10th Int. Conf. Indium Phosphide andRelated Materials, 1998, p. 447–450.
    3. 3)
      • Kipnis, I., Kukielka, J.F., Wholey, J., Snapp, C.P.: `Silicon bipolar fixed and variable gainamplifier MMICs for microwave and lightwave applications up to 6 GHz', IEEEMicrowave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1989, p. 101–104.
    4. 4)
      • Suzuki, Y., Shimawaki, H., Amamiya, Y., Nagano, N., Niwa, T., Yano, H., Honjo, K.: `50 GHzbandwidth baseband amplifiers using GaAs-based HBTs', IEEE GaAs IC-Symp. Dig., 1997.
    5. 5)
      • B. Agarwal , Q. Lee , D. Mensa , R. Pullela , J. Guthrie , M.J.W. Rodwell . Broadbandfeedback amplifier with AlInAs/GaInAs transferred-substrate HBT. Electron. Lett. , 1357 - 1358
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990003
Loading

Related content

content/journals/10.1049/el_19990003
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address