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Lumped DC–50 GHz amplifier using InP/InGaAs HBTs

Lumped DC–50 GHz amplifier using InP/InGaAs HBTs

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A direct-coupled, lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved –3 dB bandwidth is 50 GHz with a DC gain of 9.8 dB and a gain peak of only 1.2 dB. This is the largest bandwidth reported for InP/InGaAs HBT amplifiers with such a flat gain curve.

References

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      • Kipnis, I., Kukielka, J.F., Wholey, J., Snapp, C.P.: `Silicon bipolar fixed and variable gainamplifier MMICs for microwave and lightwave applications up to 6 GHz', IEEEMicrowave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1989, p. 101–104.
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      • B. Agarwal , Q. Lee , D. Mensa , R. Pullela , J. Guthrie , M.J.W. Rodwell . Broadbandfeedback amplifier with AlInAs/GaInAs transferred-substrate HBT. Electron. Lett. , 1357 - 1358
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      • Suzuki, Y., Shimawaki, H., Amamiya, Y., Nagano, N., Niwa, T., Yano, H., Honjo, K.: `50 GHzbandwidth baseband amplifiers using GaAs-based HBTs', IEEE GaAs IC-Symp. Dig., 1997.
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