High performance AlGaN/GaN HEMT with improved Ohmic contacts

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High performance AlGaN/GaN HEMT with improved Ohmic contacts

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Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Ω.mm, corresponding to a contact resistance of 5.38 × 10–8 Ω.cm2. The fabricated high electron mobility transistors with a 0.25 µm length gate exhibit a cutoff frequency fT of 60 GHz and an fmax of 100 GHz.

Inspec keywords: III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; rapid thermal annealing; ohmic contacts; high electron mobility transistors

Other keywords: cutoff frequency; rapid thermal annealing conditions; ohmic contacts; HEMT; III-V semiconductors; 60 GHz; gate length; contact resistance; 100 GHz; 0.25 micron; AlGaN-GaN; 0.039 ohmmm

Subjects: Annealing processes in semiconductor technology; Semiconductor-metal interfaces; Other field effect devices

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