Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures

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Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures

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An accurate expression for sheet carrier density (ns) calculations in modulation-doped heterostructures is developed from a nonlinear model of the Fermi potential variation with ns. This closed-form expression produces numerical results that agree well with computer simulations of low sheet carrier density AlGaAs/GaAs heterostrucutres at 300 K.

Inspec keywords: photodetectors; high electron mobility transistors; gallium arsenide; aluminium compounds; III-V semiconductors; semiconductor device models; carrier density; p-n heterojunctions

Other keywords: sheet carrier density calculations; nonlinear model; AlGaAs-GaAs; Fermi potential variation; closed-form expression; photodetectors; 300 K; modulation-doped heterostructures; MODFETs; III-V semiconductors

Subjects: Photoelectric devices; Semiconductor device modelling, equivalent circuits, design and testing; Other field effect devices

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      • S. Kola , J. Michael Golio , G.N. Maracas . An analytical expression for Fermi level versus sheet carrier concentrationfor HEMT modelling. IEEE Electron Device Lett. , 3 , 136 - 138
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      • N.H. Lu , T.M. Hsu . Electromodulation spectra of a single AlxGa1-xAs/GaAsmodulation-doped heterojunction: Experiment and theory. Phys. Rev. B , 11 , 8191 - 8197
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