An accurate expression for sheet carrier density (ns) calculations in modulation-doped heterostructures is developed from a nonlinear model of the Fermi potential variation with ns. This closed-form expression produces numerical results that agree well with computer simulations of low sheet carrier density AlGaAs/GaAs heterostrucutres at 300 K.
References
-
-
1)
-
K. Lee ,
M.S. Shur
.
Electron density of the two-dimensional electron gas in modulation dopedlayers.
J. Appl. Phys.
,
4 ,
2093 -
2096
-
2)
-
S. Padmanabhan ,
A. Rothwarf
.
Quantum inversion layer mobility: Numerical results.
IEEE Trans.
,
11 ,
2557 -
2566
-
3)
-
S. Kola ,
J. Michael Golio ,
G.N. Maracas
.
An analytical expression for Fermi level versus sheet carrier concentrationfor HEMT modelling.
IEEE Electron Device Lett.
,
3 ,
136 -
138
-
4)
-
N.H. Lu ,
T.M. Hsu
.
Electromodulation spectra of a single AlxGa1-xAs/GaAsmodulation-doped heterojunction: Experiment and theory.
Phys. Rev. B
,
11 ,
8191 -
8197
-
5)
-
B. Nabet
.
A heterojunction metal-semiconductor-metal photodetector.
IEEE Photonics Technol. Lett.
,
2 ,
223 -
225
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