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The authors report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapour phase epitaxy. The threshold for bulk stimulated emission was found to be 3.4 MW/cm2 with an emission linewidth of 1.2 nm.
Inspec keywords: stimulated emission; III-V semiconductors; semiconductor epitaxial layers; gallium compounds; semiconductor growth; vapour phase epitaxial growth; semiconductor lasers
Other keywords:
Subjects: Chemical vapour deposition; Design of specific laser systems; Stimulated emission (condensed matter); Epitaxial growth; Lasing action in semiconductors; Semiconductor lasers; II-VI and III-V semiconductors