40 Gbit/s 1.55 µm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate

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40 Gbit/s 1.55 µm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate

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Published

A 36.5 GHz bandwidth, 1.55 µm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 µm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated.

Inspec keywords: integrated optoelectronics; gallium arsenide; III-V semiconductors; p-i-n photodiodes; high electron mobility transistors; distributed amplifiers; optical receivers

Other keywords: pin photodiode; 1.55 micron; GaAs; optical data communication; 0.15 micron; pseudomorphic HEMT; eye diagram; 3 in; distributed amplifier; 40 Gbit/s; 36.5 GHz; pin-HEMT photoreceiver; GaAs substrate; monolithic integration

Subjects: Other field effect devices; Optical communication; Photoelectric devices; Integrated optoelectronics

References

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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19981376
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