Formation of ultrathin gate oxides with low-dose nitrogen implantation into Si substrates
Ultrathin gate oxides (23–40 Å) have been grown on nitrogen implanted Si substrates with doses ranging from 9 × 1012 to 5 × 1014/cm2 at 850°C in dry O2 ambient for 18 min 50 s. The controlled growth of ultrathin gate oxides is achieved by performing the post-implant RTA after the pad oxide removal.