Formation of ultrathin gate oxides with low-dose nitrogen implantation into Si substrates

Formation of ultrathin gate oxides with low-dose nitrogen implantation into Si substrates

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Ultrathin gate oxides (23–40 Å) have been grown on nitrogen implanted Si substrates with doses ranging from 9 × 1012 to 5 × 1014/cm2 at 850°C in dry O2 ambient for 18 min 50 s. The controlled growth of ultrathin gate oxides is achieved by performing the post-implant RTA after the pad oxide removal.


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