Correlation between high-voltage kink and substrate current in GaAs MESFETs

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Correlation between high-voltage kink and substrate current in GaAs MESFETs

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The kink effect in GaAs MESFETs has been studied by evaluating ungated substrate current. Through the investigations of different buffer structures and epi-ready wafers from vendors, the authors found that kinks appearing in the high-voltage regime are related to the interface states, which may be associated with the residual impurities in the epi-ready wafers.

Inspec keywords: microwave field effect transistors; interface states; gallium arsenide; electric current; semiconductor epitaxial layers; impurities; microwave power transistors; III-V semiconductors; power MESFET

Other keywords: GaAs MESFETs; substrate current; GaAs; buffer structures; epi-ready wafers; high-voltage kink; interface states; HV kink; residual impurities

Subjects: Other field effect devices; Solid-state microwave circuits and devices

References

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