High-speed pin ultraviolet photodetectors fabricated on GaN
High-speed pin ultraviolet photodetectors fabricated on GaN
- Author(s): J.C. Carrano ; T. Li ; D.L. Brown ; P.A. Grudowski ; C.J. Eiting ; R.D. Dupuis ; J.C. Campbell
- DOI: 10.1049/el:19981272
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- Author(s): J.C. Carrano 1 ; T. Li 1 ; D.L. Brown 1 ; P.A. Grudowski 1 ; C.J. Eiting 1 ; R.D. Dupuis 1 ; J.C. Campbell 1
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View affiliations
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Affiliations:
1: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, USA
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Affiliations:
1: Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, USA
- Source:
Volume 34, Issue 18,
3 September 1998,
p.
1779 – 1781
DOI: 10.1049/el:19981272 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of ~90 ps and bandwidths of ~1.6 GHz at –30 V. This is the fastest speed for a GaN-based photodetector reported to date.
Inspec keywords: photodetectors; p-i-n photodiodes; ultraviolet detectors; gallium compounds; III-V semiconductors
Other keywords:
Subjects: Photodetectors; Photoelectric devices
References
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