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Modelling technique for high-voltage MOS devices with BSIM3v3

Modelling technique for high-voltage MOS devices with BSIM3v3

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A new technique is presented for modelling high-holtage (HV) MOS devices accurately with the BSIM3v3 SPICE model. Physical meanings different from those of the original BSIM3v3 are assigned to some parameters but without changing its model equations; this method can be applied to any SPICE simulator on which the BSIM3v3 model runs.

References

    1. 1)
      • Mei, P.C., Fujikura, K., Kawano, T., Malhi, S.: `A high performance 30 V extended drain RESURF CMOS device for VLSI intelligentpowerapplications', Tech. Dig. VLSI Technol. Symp., June 1994, p. 81–82.
    2. 2)
      • v Cheng , M.-C. Jeng , Z. Liu , J. Hubg , M. Chen , P.K. Ko , C. Hu . A physical and scalable I-V model in BSIM3v3 foranalog/digital circuit simulation. IEEE Electron Devices , 2 , 277 - 287
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19981240
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