Modelling technique for high-voltage MOS devices with BSIM3v3
A new technique is presented for modelling high-holtage (HV) MOS devices accurately with the BSIM3v3 SPICE model. Physical meanings different from those of the original BSIM3v3 are assigned to some parameters but without changing its model equations; this method can be applied to any SPICE simulator on which the BSIM3v3 model runs.