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High-flux, high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes

High-flux, high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes

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Data are presented demonstrating red-orange-yellow spectrum (AlxGa1-x)0.5In0.5P/GaP high-power light-emitting diode (LED) lamps which emit 10–20 lm of flux while simultaneously maintaining luminous efficiencies of ≥ 20 lm/W. The flux emitted by these devices represents an improvement of about five times compared to conventional high-brightness transparent-substrate (AlxGa1-x)0.5In0.5P/GaP LED lamps.

Inspec keywords: aluminium compounds; III-V semiconductors; indium compounds; light emitting diodes; gallium compounds

Other keywords: luminous efficiency; high power light emitting diode lamp; transparent substrate LED; AlGaInP-GaP; brightness; flux; red-orange-yellow spectrum

Subjects: Light emitting diodes

References

    1. 1)
      • F.A. Kish , F.M. Steranka , D.C. DeFevere , D.A. Vanderwater , K.G. Park , C.P. Kuo , T.D. Osentowski , M.J. Peanasky , J.G. Yu , R.M. Fletcher , D.A. Steigerwald , M.G. Craford , V.M. Robbins . Very high-efficiency semiconductor wafer-bonded transparent-substrate(AlxGa1-x)0.5In0.5P/GaP light-emitting diodes. Appl. Phys. Lett. , 21 , 2839 - 2841
    2. 2)
      • Hewlett-Packard Company,‘Super flux LEDs’.Tech. Data Sheet 5965-5086E (1996).
    3. 3)
      • R.C. Weast . (1981) CRC handbook of chemistry and physics, 62 edition.
    4. 4)
      • F.A. Kish , D.C. DeFevere , D.A. Vanderwater , G.R. Trott , R.J. Weiss , J.S. Major . High luminous flux semiconductor wafer-bonded AlGaInP/GaP large-areaemitters. Electron. Lett. , 21 , 1790 - 1791
    5. 5)
      • F.A. Kish , R.M. Fletcher , G.B. Stringfellow , M.G. Craford . (1997) AlGaInP light-emitting diodes, High-brightness light-emitting diodes.
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