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Optimised gate-drain feedback capacitance of W-band high gain passivated 0.15 µm InAlAs/InGaAs HEMTs

Optimised gate-drain feedback capacitance of W-band high gain passivated 0.15 µm InAlAs/InGaAs HEMTs

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A 0.15 µm high gain, passivated, double-side-doped InAlAs/InGaAs HEMT with high uniformity over 2 in InP substrates has been developed. A measured gain of 12.5 dB at 94 GHz was achieved at a drain bias of 2 V, giving an fmax exceeding 400 GHz. This high gain is mainly related to the extremely low gate-drain feedback capacitance, for which the physical origins will be demonstrated. Using this technology, a single stage amplifier with 10.3 dB gain at 88 GHz and a distributed amplifier with 11 dB gain and 89 GHz bandwidth were fabricated.

References

    1. 1)
      • P.M. Smith , S.M.J. Liu , M.Y. Kao , P. Ho , S.C. Wang , K.H.G. Duh , S.T. Fu , P.C. Chao . W-band high efficiency InP-based power HEMT with 600 GHz fmax. IEEE Microw. Guid. Wave Lett. , 230 - 232
    2. 2)
      • Chertouk, M., Steinhagen, F., Massler, H., Dammann, M., Haydl, W.H., Köhler, K., Weimann, G.: `W-band high gain passivated 0.15 µm InP-based HEMTs MMIC technologywith high thermal stability on InPsubstrates', Indium Phosphide and Related Materials Conference, 1998, Tsukuba, Japan, p. 227–230.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19981209
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