Quantum confined Stark effects of heavy-hole confined states in In0.53Ga0.47As/In0.52Al0.48As multiquantum well structure using photocurrent spectroscopy

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Quantum confined Stark effects of heavy-hole confined states in In0.53Ga0.47As/In0.52Al0.48As multiquantum well structure using photocurrent spectroscopy

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Photocurrents in an In0.53Ga0.47As/In0.52Al0.48As multiquantum well structure containing 10 nm wide wells were measured at room temperature. The spectra showed fine steplike structures accented by exciton peaks of interband transitions. The exciton peaks of heavy-hole transitions responded very sensitively to the electric field due to the quantum confined Stark effect. The energies of the experimental confined states of the heavy-hole extrapolated from the larger electric field were roughly proportional to the squares of quantum numbers. The nonparabolicity of an effective mass of the heavy-hole was surmised to be very small in a direction normal to the well plane.

Inspec keywords: photoconductivity; quantum confined Stark effect; III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum wells; excitons; aluminium compounds; effective mass

Other keywords: interband transition; effective mass; photocurrent spectroscopy; exciton; field-hole transition; In0.53Ga0.47As-In0.52Al0.48As; quantum confined Stark effect; In0.53Ga0.47As/In0.52Al0.48As multiquantum well; heavy hole confined state; electric field; quantum number

Subjects: Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter); Electron states in low-dimensional structures; Excitons and related phenomena; Photoconduction and photovoltaic effects; photodielectric effects; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Effective mass and g-factors (condensed matter electronic structure)

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