Infrared difference frequency generation with quasi-phase-matched GaAs
Infrared difference frequency generation with quasi-phase-matched GaAs
- Author(s): E. Lallier ; L. Becouarn ; M. Brévignon ; J. Lehoux
- DOI: 10.1049/el:19981143
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- Author(s): E. Lallier 1 ; L. Becouarn 1 ; M. Brévignon 1 ; J. Lehoux 1
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View affiliations
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Affiliations:
1: Laboratoire Central de Recherches, THOMSON-CSF, Orsay, France
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Affiliations:
1: Laboratoire Central de Recherches, THOMSON-CSF, Orsay, France
- Source:
Volume 34, Issue 16,
6 August 1998,
p.
1609 – 1611
DOI: 10.1049/el:19981143 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors report infrared difference-frequency generation in a high transmission diffusion-bonded GaAs stack. Using an LiNbO3 optical parametric oscillator as the pump source, a conversion efficiency of 3.4 × 10–4, output energy of 2 µJ and 180 W peak power were obtained at 11.35 µm.
Inspec keywords: gallium arsenide; III-V semiconductors; optical frequency conversion
Other keywords:
Subjects: Nonlinear optics and devices; Optical harmonic generation, frequency conversion, parametric oscillation and amplification
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