The influence of the quadratic attenuation mobility factor on the low frequency 1/f noise in MOS transistors is investigated. By taking into account the correlated mobility fluctuations, the influence of the surface roughness scattering on the input referred noise under strong inversion is analysed. The quadratic attenuation mobility factor is found to reduce the impact of the mobility fluctuations on the normalised drain current noise.
References
-
-
1)
-
P.K. McLarty ,
S. Cristoloveanu ,
O. Faynot ,
V. Mistra ,
J.R. Hauser ,
J.J. Wortman
.
A simple parameter extraction method for ultra-thin oxide MOSFET's.
Solid-State Electron.
,
1175 -
1177
-
2)
-
A. van der Ziel
.
(1986)
Noise in solide state devices and circuits.
-
3)
-
G. Ghibaudo ,
O. Roux ,
Ch. Nguyen-Duc ,
F. Balestra ,
J. Brini
.
Improved analysis of low frequency noise in field-effect MOS transistors.
Phys. Stat. Sol. A
,
571 -
582
-
4)
-
T. Ong ,
P.K. Ko ,
C. Hu
.
50 Å gate-oxide MOSFET’s at 77 K.
IEEE Trans.
,
2129 -
2135
-
5)
-
S.C. Sun ,
J.D. Plummer
.
Electron mobility in inversion and accumulation layer on thermally oxidised silicon surfaces.
IEEE Trans.
,
1497 -
1508
-
6)
-
K.K. Hung ,
P.K. Ko ,
C. Hu
.
A unified model for the flicker noise in metal-oxide-semiconductor field-effecttransistors.
IEEE Trans.
,
3 ,
654 -
665
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19981122
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