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Internal temperature distribution measurements in high power semiconductor lasers

Internal temperature distribution measurements in high power semiconductor lasers

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A novel technique to measure internal temperature distributions within high power semiconductor lasers with substrates transparent to the laser radiation is presented. The temperature resolution is better than 1°C with a spatial resolution of 1–2 µm. The results show highly non-uniform transverse temperature distributions and significant heating close to the facet at high output powers.

Inspec keywords: laser variables measurement; temperature distribution; spectral methods of temperature measurement; semiconductor lasers

Other keywords: high power semiconductor lasers; internal temperature distribution measurements; nonuniform transverse temperature distributions; laser radiation transparent substrate; high output powers

Subjects: Thermal instruments and techniques; Thermal variables measurement; Lasing action in semiconductors; Semiconductor lasers

References

    1. 1)
      • Purhert, R., Barwolff, A., Tomm, J., Menzel, U., Lau, A., Voss, M.: `Facet temperature limits ofGaAlAs/GaAs high power laser diode arrays', CMA7, Proc. CLEO 97, 1997.
    2. 2)
      • G. Hadley , J. Hohimer , A. Owyoung . Comprehensive modeling of diode arrays and broad-area deviceswith applications to lateral index tailoring. IEEE J. Quantum Electron. , 11 , 2138 - 2152
    3. 3)
      • G.H.B. Thompson . (1985) Physics of semiconductor lasers.
    4. 4)
      • M. Wright , G. Dente , D. Bossert , M. Tilton . Modified substrate spontaneous emission in broad areasemiconductor lasers. Appl. Phys. Lett. , 8 , 937 - 939
    5. 5)
      • G. Hadley , J. Hohimer , A. Owyoung . Mode control in broad-area diode lasers by thermally inducedlateral index tailoring. Appl. Phys. Lett. , 4 , 260 - 262
    6. 6)
      • Hall, D., Goldberg, L., Mehuys, D.: `Lateral temperature profiling in high-power cw broad-area lasersand amplifiers', CWA6, Proc. CLEO 92, 1992.
    7. 7)
      • P. O'Brien , C. Moorhouse , Braddell , J. McInerney . Imaging of curved facet unstable resonator semiconductorlasers operating at 980 nm. Electron. Lett. , 6 , 561 - 562
    8. 8)
      • A. Mosser , E. Latta , D. Webb . Thermodynamics approach to catastrophic optical mirror damage ofAlGaAs single quantum well lasers. Appl. Phys. Lett. , 12 , 1152 - 1154
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