Continuous-wave operation of singlemode GaInAsSb lasers emitting near 2.2 µm at Peltier temperatures

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Continuous-wave operation of singlemode GaInAsSb lasers emitting near 2.2 µm at Peltier temperatures

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A continuous-wave regime, lasing near 2.2 µm, has been achieved for single longitudinal mode GaInSbAs double heterostructure lasers mounted on a Peltier cooler. In the pulsed regime the lasers exhibited a characteristic temperature of the threshold current as high as 132 K at heatsink temperatures up to 60°C.

Inspec keywords: laser transitions; gallium arsenide; cooling; semiconductor lasers; indium compounds; laser modes; Peltier effect; gallium compounds; III-V semiconductors

Other keywords: CW operation; pulsed regime; 60 C; 2.2 micron; continuous-wave regime; singlemode GaInAsSb lasers; characteristic temperature; Peltier temperatures; single longitudinal mode; threshold current; GaInAsSb-GaAlAsSb; Peltier cooler; 132 K; double heterostructure lasers; heatsink temperatures

Subjects: Design of specific laser systems; Semiconductor lasers; Lasing action in semiconductors

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