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Polarisation anisotropy in asymmetric oxide aperture VCSELs

Polarisation anisotropy in asymmetric oxide aperture VCSELs

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Strong polarisation discrimination is observed from asymmetric oxide-aperture vertical cavity surface emitting lasers (VCSELs). The polarisation state perpendicular to the longer direction of the slit-shaped oxide aperture dominates when the aperture width is < 4 µm. Generally, the mode size for TM polarisation is slightly less than that for TE polarisation, indicating polarisation-dependent scattering losses. A 1.4 µm oxide aperture VCSEL gives a polarisation extinction ratio (PER) of up to 184 .

Inspec keywords: surface emitting lasers; light polarisation

Other keywords: polarisation anisotropy; polarisation extinction ratio; asymmetric oxide aperture VCSEL; vertical cavity surface emitting laser; mode size; scattering loss

Subjects: Laser resonators and cavities; Semiconductor lasers; Lasing action in semiconductors; Laser resonators and cavities

References

    1. 1)
      • M. Takahashi . An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)Asubatrate having low-threshold and stable polarization. IEEE Photonics Technol. Lett. , 737 - 739
    2. 2)
      • Y.G. Ju . Strong polarization selectivity in 780 nmvertical-cavity surface-emitting lasers grown on misoriented substrates. Appl. Phys. Lett. , 741 - 743
    3. 3)
      • T. Mukaihara , F. Koyama , K. Iga . Engineered polarization control of GaAs/AlGaAs surface-emitting lasersby anisotropic stress from ellipticaletched substrate hole. IEEE Photonics Technol. Lett. , 133 - 135
    4. 4)
      • R.W.P. King , T.T. Wu . (1959) The scattering and diffraction of waves.
    5. 5)
      • K.D. Choquette , R.E. Leibenguth . Control of vertical-cavity laser polarization with anisotropic transversecavity geometries. IEEE Photonics Technol. Lett. , 40 - 42
    6. 6)
      • J.H. Ser . Polarization stabilization ofvertical-cavity surface-emitting lasers by inscription of fine metal-interlaced gratings. Appl. Phys. Lett. , 2769 - 2771
    7. 7)
      • S.J. Schablitsky . Controlling polarization ofvertical-cavity surface-emitting lasers using amorphus silicon subwavelength transmissiongratings. Appl. Phys. Lett. , 7 - 9
    8. 8)
      • T. Yoshikawa . Complete polarization-control of 8 × 8 vertical-cavity surface-emittinglaser matrixarrays. Appl. Phys. Lett. , 908 - 910
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