Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz

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Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz

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Published

GaAs TUNNETT diodes on diamond heat sinks yielded state-of-the-art RF power levels of 9 and > 4 mW with corresponding DC-to-RF conversion efficiencies of > 1.0 and > 0.6% in a second-harmonic mode at 209 and 235 GHz, respectively. The phase noise was well below –94 dBc/Hz at a carrier frequency of 500 kHz. Simulations revealed a varactor-like mode of operation.

Inspec keywords: diamond; heat sinks; phase noise; power semiconductor diodes; III-V semiconductors; transit time devices; millimetre wave diodes; gallium arsenide; semiconductor device noise; tunnel diodes

Other keywords: diamond heat sinks; 209 to 235 GHz; GaAs TUNNETT diodes; DC-to-RF conversion efficienc; varactor-like operation mode; C; 0.6 to 1 percent; 4 to 9 mW; second-harmonic power extraction; GaAs; phase noise

Subjects: Product packaging; Solid-state microwave circuits and devices; Packaging; Junction and barrier diodes

References

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      • Eisele, H., Chen, C.-C., Mains, R.K., Haddad, G.I.: `Performance of GaAs TUNNETT diodes as local oscillator sources', Proc. Fifth Int. Symp. on Space Terahertz Technology, 10–13 May 1994, Ann Arbor, Michigan, p. 622–628.
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      • H. Eisele , G.I. Haddad . Two-terminal millimeter-wave sources. IEEE Trans. Microw. Theory Tech. , 6
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      • T.W. Crowe , T.C. Grein , R. Zimmermann , P. Zimmermann . Progress toward solid-state local oscillators at 1 THz. IEEE Microw. Guided Wave Lett. , 207 - 208
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      • Nishizawa, J., Motoya, K., Okuno, Y.: `Submillimeter wave oscillation from GaAs TUNNETT diode', 9th European Microwave Conf., 1979, p. 463–467.
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      • A.V. Räisäinen . Frequency multipliers for millimeter and submillimeter wavelengths. Proc. IEEE , 1842 - 1852
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