Optoelectronic clock recovery circuit using resonant tunnelling diode and uni-travelling-carrier photodiode

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Optoelectronic clock recovery circuit using resonant tunnelling diode and uni-travelling-carrier photodiode

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Published

An optoelectronic clock recovery circuit is reported that monolithically integrates a resonant tunnelling diode and a uni-travelling-carrier photodiode. The integrated circuit extracts an electrical 11.55 GHz clock signal from 11.55 Gbit/s RZ optical data streams in a wide locking range with low power dissipation. Furthermore, the extraction of a subharmonic clock from 23.1 and 46.2 Gbit/s input data streams is also confirmed.

Inspec keywords: resonant tunnelling diodes; integrated optoelectronics; clocks; photodiodes

Other keywords: 11.55 Gbit/s; integrated circuit; optoelectronic clock recovery circuit; locking range; resonant tunnelling diode; RZ optical data stream; 46.2 Gbit/s; uni-travelling-carrier photodiode; monolithic integration; 11.55 GHz; 23.1 bit/s; power dissipation

Subjects: Junction and barrier diodes; Other digital circuits; Integrated optoelectronics; Photoelectric devices

References

    1. 1)
      • Ishibashi, T., Shimizu, N., Kodama, S., Ito, H., Nagatsuma, T., Furuta, T.: `Uni-traveling-carrierphotodiodes', UWA2-1, Tech. Dig. of Ultrafast Electronics andOptoelectronics, 1997, p. 166–168.
    2. 2)
      • K. Sano , K. Murata , T. Akeyoshi , N. Shimizu , T. Otsuji , M. Yamamoto , T. Ishibashi , E. Sano . Ultra-fast optoelectronic circuit using resonant tunnelling diodesand a uni-travelling-carrier photodiode. Electron. Lett. , 2 , 215 - 217
    3. 3)
      • Akeyoshi, T., Shimizu, N., Osaka, J., Yamamoto, M., Ishibashi, T., Sano, K., Murata, K., Sano, E.: `An optoelectronic logic gate monolithically integrating resonanttunneling diodes and a uni-traveling-carrier photo diode', WB3-4, Int. Conf. on Indium Phosphide and Related Materials, 1998.
    4. 4)
      • J. Nagumo , M. Shimura . Self-oscillation in a transmission line with a tunneldiode. Proc. IRE , 8 , 1281 - 1291
    5. 5)
      • T. Otsuji , M. Yaita , T. Nagatsuma , E. Sano . 10-80-Gbit/s highly extinctiveelectrooptic pulse pattern generation. IEEE J. Sel. Top. Quantum Electron. , 3 , 643 - 649
    6. 6)
      • A.F. Lann , E. Grumann , A. Gabai , J.E. Golub . Phase locking between lightpulses and a resonant tunneling diode oscillator. Appl. Phys. Lett. , 4 , 13 - 15
    7. 7)
      • T.P. Higgins , J.F. Harvey , D.J. Sturzebecher , A.C. Paolella , R.A. Lux . Direct optical frequency modulation and injection-locking of resonanttunnel diodeoscillator. Electron. Lett. , 17 , 1574 - 1576
    8. 8)
      • S.C. Kan , P.J. Harshman , K.Y. Lau , Y. Wang , W.I. Wang . Optical control ofresonant tunneling diode monolithically integrated with PIN photodiode. IEEE Photonics Technol. Lett. , 5 , 641 - 643
    9. 9)
      • N. Shimizu , N. Watanabe , T. Furuta , T. Ishibashi . InP-InGaAs uni-traveling-carrier photodiode with improved 3 dB bandwidthof over 150 GHz. IEEE Photonics Technol. Lett. , 3 , 412 - 414
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