3.3 V, 50 Mbit/s one-chip Si-bipolar transceiver LSI for optical burst-mode communications

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3.3 V, 50 Mbit/s one-chip Si-bipolar transceiver LSI for optical burst-mode communications

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A 3.3 V, 50 Mbit/s, one-chip transceiver LSI fabricated by a 4 GHz Si-bipolar process includes an adjustment-free instantaneous response receiver and a laser-diode (LD) driver to build a low-cost optical interface module for FTTH systems. The LSI, assembled with a conventional 0.8 A/W photodiode and 0.2 W/A LD, has an input optical receiver range of –37.8 to –17.0 dBm and an optical average output power of +6 dBm.

Inspec keywords: optical fibre subscriber loops; driver circuits; silicon; integrated optoelectronics; semiconductor lasers; optical crosstalk; bipolar integrated circuits; transceivers; large scale integration

Other keywords: FTTD systems; GHz Si-bipolar process; low-cost optical interface module; adjustment-free instantaneous response receiver; photodiode; 3.3 V; optical average output power; 4 GHz; input optical receiver range; laser-diode driver; optical burst-mode communications; Mbit/s one-chip Si-bipolar transceiver LSI

Subjects: Optical communication; Semiconductor integrated circuits; Integrated optoelectronics; Power electronics, supply and supervisory circuits; Subscriber loops; Semiconductor lasers; Bipolar integrated circuits

References

    1. 1)
      • Ishihara, N., Nakamura, M., Akazawa, Y., Uchida, N., Akahori, Y.: `3.3 V, 50 Mb/s CMOS transceiver for optical burst-mode communication', Proc. ISSCC'97, 1997, p. 244–245.
    2. 2)
      • Ota, Y.: `Low cost - low power digital receiver module for 50 Mb/s PON', OECC'96 Dig., 1996, p. 536–537.
    3. 3)
      • I. Ikushima . High-performance compact optical WDM transceiver module for passive double star subscriber systems. J. Lightwave Technol. , 3 , 517 - 524
    4. 4)
      • Miki, N., Okada, K.: `Access flexibility with passive double star systems', IEEE 5th Conf. Optical/Hybrid Access Networks Proc., 1993.
    5. 5)
      • Swartz, R.G.: `A burst mode, packet receiver with precision reset and automatic dark level compensation for optical bus communication', VLSI Symp. Tech. Dig., 1993, p. 67–68.
    6. 6)
      • M. Nakamura , N. Ishihara , Y. Akazawa , H. Kimura . An instantanious response CMOS optical receiver IC with wide dynamic range and extremely high sensitivity using feed-forward auto-bias adjustment. IEEE J. Solid-State Circuits , 9 , 991 - 997
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